李傑民

李傑民，男,河北邢台人，1972年9月生，2006年中科院半導體研究所材料物理與化學博士畢業，參加國家自然科學基金2項，公開發表SCI檢索學術論文10多篇。2006年4月至今在清華大學深圳研究生院做博士后工作

GaN材料的相關物理特性；LED光學設計與模擬；半導體照明。

部分發表的論文。

1. J. M. Li, K. Y. Qian, Q. S. Zhu, Z. G.Wang, Q. G. Du, Intrasubband and intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells, Applied Physics Letters (003715APL) (SCI)

2. J. M. Li, Y. W. Lu, D. B. Li, X. X. Han, Q. S. Zhu, X. L. Liu, Z. G. Wang, Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN/GaN quantum well, Journal of Vacuum Science and Technology, 22-6 (2004) 2568. (SCI)

3. J. M. Li, X. X. Han, J.J Wu, Q. S. Zhu, Z. G. Wang, Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-xN/GaN multiple quantum wells, Physica E, 25(2005) 575. (SCI)

4. J. M. Li, Y. W. Lu, X. X. Han, J. J. Wu, X. L. Liu, Q. S. Zhu and Z. G. Wang, Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/ AlyGa1-yN step quantum well, Physica E, 28 (2005) 453. (SCI)

5. J. M. Li, J. J. Wu, X. X. Han, Y. W. Lu, X. L. Liu, Q. S. Zhu and Z. G. Wang, Model for scattering due to interface roughness in finite quantum wells, Semiconductor Science and Technology, 20 (2005) 1207. (SCI)