黃森

黃森，男， 副研究員，博士，通訊地址為北京市朝陽區北土城西路3號。

2000-2004：大連理工大學物理系 電子科學技術專業，學士

2004-2009：北京大學物理學院 凝聚態物理專業，博士

2009-2012：香港科技大學電子工程系 博士后

2012- ：中科院微電子研究所 副研究員

高壓高效GaN-on-Si功率電子器件及模塊研究；III-V族化合物半導體電子器件的先進位備工藝，表徵技術及器件物理研究。

[1]S. Huang, B. Shen, M. J. Wang, F. J. Xu, Y. Wang et al., “Current transport mechanism of Au∕Ni∕GaN Schottky diodes at high temperatures,” Applied Physics Letters, vol

[2]S. Huang, Q. M. Jiang, S. Yang, C. H. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-grown AlN Thin Film,” IEEE Electron Device Letters, vol

[3]S. Huang, Q. M. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs: Compensation of interface trap states by polarization charges,” IEEE Electron Device Letters, vol

[4]S. Huang, K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X. Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen, “High fMAX high Johnson’s figure-of-merit 0.2 μm gate AlGaN/GaN HEMT on Silicon substrate with AlN/SiNx passivation,” IEEE Electron Device Letters, vol

[5]S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors,” Japanese Journal of Applied Physics

[6]S. Huang, H. W. Chen, and K. J. Chen, “Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1-xN∕GaN heterostructures,” Applied Physics Letters, vol

[7]S. Huang, B. Shen, F. J. Xu, F. Lin, Z. L. Miao et al., “Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N∕GaN heterostructures with AlN interlayers,” Semiconductor Science and Technology, vol

[8]S. Huang, B. Shen, F. Lin, N. Ma, F. J. Xu et al., “Ni diffusion and its influence on electrical properties of AlxGa1-xN∕GaN heterostructures,” Applied Physics Letters, vol

[9]S. Huang, K. Wei, Z. Tang, S. Yang, C. Liu et al., “Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation,” Journal of Applied Physics

[1]Kevin Jing Chen, Sen Huang, Qimeng Jiang, and Zhikai Tang, “Passivation of group III-nitride heterojunction devices

[2]黃森等，“GaN基高電子遷移率晶體管的低溫無金歐姆接觸的製作方法”

作為項目負責人承擔國家自然科學基金面上項目“基於極化電荷補償界面態鈍化理論的GaN基功率開關可靠性及增強技術研究”