周鵬

周鵬教授，博士生導師。先後獲得復旦大學“卓學計劃”人才支持，上海市青年科技啟明星、國家自然基金委優秀青年資助。微電子學院先進電子器件研究所副所長，主持“上海市微納器件與工藝專業技術服務平台”工作。於2000年、2005年分別獲復旦大學物理學學士和博士學位。2006-2007年在首爾國立大學Inter-大學半導體高級研究中心任訪問學者。主持了國家重大專項子課題、自然科學基金、上海市教委科技創新重點項目、973子課題等12項國家部委科研項目。出版中英文5本著作章節，在Nature Nano，Advanced Materials，Nano Lett，Advanced Functional Materials，2D Materials, ACS Nano，Carbon, Applied Physics Letters, Small, IEEE Electron Device Letters等發表第一作者及通信作者論文50餘篇。其中2007年發表在Applied Physics Letters的研究工作已被SCI他引141次。獲得授權中國發明專利6項。所培養學生攻讀學位期間獲得了國家獎學金、企業獎學金及各類一等獎學金，畢業後進入華為、展訊、AMD及SMIC等國際影響力企業。

1996.9--2000.6，復旦大學物理學系，獲學士學位

2000.9--2005.6，復旦大學信息科學與工程學院，獲博士學位

2006.9--2007.8，韓國首爾國立大學Inter-University半導體研究中心，訪問學者

國家自然科學基金項目，基於過渡金屬氧化物薄膜的新型電阻式存儲的可靠開關機理及器件製備技術研究

國家自然科學基金項目，碳基電路中的納米尺度阻式存儲穩定實現及物理機制

上海市教育委員會科技創新重點項目，高遷移率石墨烯/柵疊層製備及物理特性研究

國家“極大規模集成電路製造技術及成套工藝”重大專項項目，石墨烯電子器件與集成技術研究

1.周 鵬，《半導體存儲器概論》，北京郵電大學出版社，ISBN:978-7-5635-3658-0,2013，345千字。

2.Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’，Taylor & Francis Group， ISBN:978-1-4398-4835-7，2011，20千字。本書已被科學出版社引進翻譯出版。

3.Peng Zhou, Lin Chen，Hangbing Lv，Haijun Wan，Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nanoscale Semiconductor Memories: Technology and Applications’，Taylor & Francis Group，ISBN: 978-1-4665-6060-4，2013，20千字。

代表性論文：

Zhou Peng, Chen Lin，Lv Hangbing，Wan Haijun，Sun Qingqing, Chapter‘Nonvolatile Memory Device: Resistive Random Access Memory’in Book‘Nano-Semiconductors Device and Technology’，Taylor & Francis Group，ISBN：2011.

第一作者和通信作者論文：

1.Peng Zhou*

2.Peng Zhou

3.Advanced Science,

4.Huawei Chen, Jingyu Li, Xiaozhang Chen, David Wei Zhang and Peng Zhou*, Dramatic switching behavior in suspended MoS2 field-effect transistors, (Semiconductor science and technology, 33,024001,2018). (通信作者)

5.Chao Li, Xiao Yan, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructure in MoS2 transistors, (Applied Physics Letters 111, 193502, 2017) (通信作者)

6.Chao Li, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different alignment（Nanotechnology,28,415201, 2017)

7.Xiongfei Song, Zhongxun Guo, Qiaochu Zhang, Peng Zhou*, Wengzhong Bao* and David Wei Zhang, Progress of large-scale synthesis and electronic device application of two-dimensional transition metal dichalcogenides, (Small, 1700098, 2017). (通信作者，邀請綜述)

8.Xiao Yan, Chunsen Liu, Chao Li, Wengzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou*, Tunable SnSe2/Wse2 heterostructure tunneling field effect transitor, (Small, 1701478, 2017). (通信作者)

9.Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K.Chu, Peng Zhou* Zengfeng Di*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 1700929, 2017). (通信作者)

10.Chunsen Liu, Xiao Yan, Enze Zhang, Xiongfei Song, Qingqing Sun, Shijin Ding, Wengzhong Bao, Faxian Xiu*, Peng Zhou* and David Wei Zhang, Various and tunable transport properties of WSe2 transistor formed by metal contacts, (Small, 1604128, 2017). (通信作者)

11.Chunsen Liu, Xiao Yan, Jianlu Wang*, Shijin Ding, Peng Zhou* and David Wei Zhang*, Eliminating over-erase behavior by designing energy band in high speed charge-trap memory based on WSe2, (Small, 1604128, 2017). (通信作者)

12.Yawei Dai, Wenzhong Bao, Linfeng Hu, Chunsen Liu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou* and David Wei Zhang, Forming free and ultralow power erase operation in atomically crystal TiO2 resistive switching, (2D Materials, 4, 2017) doi.org/10.1088/2053-1583. (通信作者)

13.E. Zhang, P. Wang, Z. Li, H. Wang, C. Song, C. Huang, Z.G. Chen, L. Yang, K. Zhang, S. Lu, W.Y. Wang, S. Liu, H. Fang, X. Zhou, H. Yan, J. Zou, X.G. Wan, P. Zhou*, W. Hu, and F.X. Xiu, Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets (ACS Nano, 10, 8067 -8077,2016). (通信作者)

14.Peng Zhou*, Xiongfei Song, Xiao Yan, Chunsen Liu，Lin Chen, Qingqing Sun, and David Wei Zhang, Controlling the work function of molybdenum disulfide by in situ metal deposition（Nanotechnology,27,344002, 2016)

15.X. Yuan, L.Tang, S.S. Liu, P. Wang, Z.G. Chen, C. Zhang, Y. W. Liu, J. Zou, Peng Zhou*，W. Hu, F.X. Xiu，Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy，(Nano Letters，2015，15（5）：3571-3577). (通信作者)（ESI 高引）

16.E. Zhang, Y. Jin, X. Yuan, W.Y. Wang, C. Zhang, L. Tang, S.S. Liu, Peng Zhou*，W. Hu, F.X. Xiu，ReS2-based field-effect transistors and photodetectors， (Advanced Functional Materials，25（26）：4076-4082,2015). (通信作者)

17.Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou,* and Faxian Xiu, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano,9,612-619 ,2015）. (通信作者)

18.Peng Zhou*, Songbo Yang, Qingqing Sun, Lin Chen, Pengfei Wang, Shijin Ding & David Wei Zhang, Direct deposition of uniform high-k dielectrics on graphene,（Scientific Reports ,4(6448),2014). (通信作者)

19.Songbo Yang, Peng Zhou,* Lin Chen, Qingqing Sun, Pengfei Wang, Shijin Ding, Anquan Jiang and David Wei Zhang, Direct observation of the work function evolution of graphene-two-dimensional metal contacts, （Journal of Materials Chemistry C , 2,8042—8046,2014）. (通信作者)

20.Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan，Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang， Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon，62，157-164,2013）. (通信作者)

21.Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, （Journal of Materials Chemistry C , 2,2548-2552,2013）. (通信作者)

22.Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,（Nanoscale Research Letters ,8, (2013), 91(1-5)

23.Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO （IEEE Transactions on Nanotechnology, 11, 1059, 2012)

24.Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories（Applied Physics Letters, 100, 063509, 2012) (通信作者)

25.Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X.B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning （Applied Physics Letters, 99, 141911, 2011) (通信作者)

26.Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity (IEEE Electron Device Letters. 32，1167-1169, 2011) (通信作者)

27.Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)

28.Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010)

29.Zhou P ,Yin M, Wan H J，Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters, 94, 053510, 2009)

30.Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, （Journal of Vacuum Science &Technology B, 27,1030-1034, 2009）(通信作者)

31.Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)

32.Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi，Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application （Journal of Vacuum Science & Technology B, 26,1030-1033, 2008）

33.Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者)

34.Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters ,90 (18): 183507, 2007) (通信作者)

徠35.Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)

36.Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)

37.Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X，Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters, 83 (19): 3876-3878, 2003)

合作者發表論文選錄：

1.Peng Zhou

2.P. Zhou

3.Peng Zhou

集成電路工藝和新型二維半導體功能器件。

具體包括原始創新石墨烯上原子層沉積技術應用，下一代非揮發存儲器工作機制與大規模製造工藝，碳基電路存儲器與晶體管集成技術以及MoS2，BN，NbSe2等其他二維晶體應用研究等。為中芯國際、華虹、士蘭等重要集成電路製造企業研發部門提供技術諮詢。

本科課程：應用光伏學

研究生課程：半導體存儲材料、器件與工藝