王俊

1996.9—2000.7 中國 華中科技大學 電子科學與技術系 學士

2000.9—2003.7 中國 中國科學院半導體研究所 固體電與微電子學專業 碩士

2003.8—2005.5 美國 南卡羅萊納大學 電子工程專業 碩士

2005.6—2009.12 美國 北卡羅萊納州立大學 電子工程專業 博士

2010.2—2013.12 美國 德州儀器公司 工程師

2014.1—至今 中國湖南大學 教授

湖南大學電氣與信息工程學院教授、博士生導師。

“湖南大學超大功率半導體研究中心”副主任。

近十年主要從事功率半導體器件及其在電力電子系統中應用的研究，研製了世界首個碳化硅ETO晶閘管，在國際高水平刊物和會議上已發表論文二十餘篇，獲2項美國國家發明專利。

1）硅基功率器件的研究。

2）碳化硅（SiC）功率器件及電力電子應用的研究。

3）氮化鎵（GaN）器件的研究。

1. J. Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent 8614480.

2. J. Korec, S. Xu, J. Wang, B. Yang, “Capacitors and Methods of Forming”, United States Patent 8722503.

3. Y. Du, J. Wang, G. Wang, A. Q. Huang, "Modeling of the High-Frequency Rectifier With 10-kV SiC JBS Diodes in High-Voltage Series Resonant Type DC-DC Converters", IEEE Transactions on Power Electronics, vol. 29, no. 8, August 2014, pp.4288-4300.

4. B. Yang, J. Wang, S. Xu, J. Korec, Z. Shen, "Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications", IEEE Transactions on Power Electronics, vol. 28, no. 9, September 2013, pp.4202-4215.

5. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, “Smart grid technologies,” IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23.

6. J. Wang, A. Q. Huang, “Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197.

7. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, “Characterization, Modeling and Application of 10 kV SiC MOSFET,” IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008.

8. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, “Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.

9. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, “10 kV SiC MOSFET Based Boost Converter,” IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009.

10. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, “Thermal annealing behavior of Pt on n-GaN Schottky contacts,” JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022.

11. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, “Metal-semiconductor-metal ultraviolet photodetector based on GaN,” Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.

12. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., “Design and Characterization of High Voltage 4H-SiC p-IGBTs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

13. J. Wang, Z. Shuai, J. Shen,“Feasibility of High Voltage SiC Thyristor in HVDC Transmission” , accepted and presented in IEEE PES Asia-Pacific Power and Energy Engineering Conference (APPEEC) 2014, Honkong, 7-10 December, 2014.

14. J. Wang, S. Xu, J. Korec, F. Baiocchi, “Asymmetric Gate Resistor Power MOSFET”, IEEE 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2012, Bruges, Belgium, June 2012, pp. 409-412.

15. J. Wang, J. Korec, S. Xu, “Low voltage NexFET with record low figure of merit”, Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-seventh Annual IEEE, 5-9 Feb. 2012, pp. 149-151.

16. B. Yang, S. Xu, J. Korec, J. Wang, O. Lopez, D. Jaureui, C. Kocon, J. Herbsommer, S. Molloy, G. Daum, H. Lin, C. Pearce, J. Noquil, J. Shen, “NexFET generation 2, new way to power”, Electron Device Meeting (IEDM), 2011 IEEE International, 5-7 Dec. 2011.

17. J. Wang, G. Wang, S. Bhattacharya, A. Huang, “Comparison of 10-kV SiC power devices in solid-state transformer”, IEEE Energy Conversion Congress and Exposition, ECCE 2010, Atlanta, Georgia, Sep. 2010, pp. 3284-3289

18. J. Wang, Y. Du, S. Bhattacharya, A. Q. Huang, “Characterization, Modeling of 10-kV SiC JBS Diodes and Their Application Prospect in X-Ray Generators,” IEEE Energy Conversion Congress and Exposition, ECCE 2009, San Jose, California, Sep. 2009, pp. 1488-1493.

19. W. Sung, J. Wang, A. Q. Huang, B. J. Baliga, “Design and investigation of frequency capability of 15kV 4H-SiC IGBT,” IEEE 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2009, Barcelona, Spain, Jun. 2009, pp. 271-274.

20. J. Wang, A. Q. Huang, B. J. Baliga, “RBSOA Study of High Voltage SiC Bipolar Devices,” IEEE 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2009, Barcelona, Spain, Jun. 2009, pp. 263-266.

21. J. Wang, G. Wang, A. Q. Huang, “Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications,” The Applied Power Electronics Conference and Exposition, APEC 2009, IEEE, Washington, DC, Feb. 2009, pp. 658-664.

22. J. Wang, A. Q. Huang, R. Callanan, A. Agarwal, et al., “10 kV SiC MOSFET Based Boost Converter,” IEEE Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Canada, October 2008, pp. 978-984.

23. J. Wang, T. Zhao, L. Yang, A. Q. Huang, “Characteristics of 10 kV SiC MOSFET and PIN Diode and Their Application Prospect in High Voltage High Frequency DC/DC Converter,” IEEE Power Electronics Specialists Conference, 2007 (PESC 2007), Orlando, Florida, June 2007, pp. 72-77.

24. T. Zhao, J. Wang, L. Yang, A. Q. Huang, “Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems,” IEEE Industry Applications Society Annual Meeting, IAS 2007, New Orleans, Louisiana, September 2007, pp. 331-335.